Name: Kingston Technology ValueRAM 4GB DDR3-1600MHz memory module 1 x 4 GB
Brand: Kingston Technology
SKU: KVR16S11S8/4BK
Price: 44.93 GBP
Availability: OutOfStock

Kingston Technology ValueRAM 4GB DDR3-1600 memory module 1 x 4 GB 1600 MHz

£27.40

RRP £32.19

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Kingston Technology ValueRAM 4GB DDR3L 1600MHz memory module 1 x 4 GB

£25.51

RRP £32.32

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Kingston Technology ValueRAM KVR26S19S6/4 memory module 4 GB 1 x 4 GB DDR4 2666 MHz

£22.31

RRP £27.14

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Kingston Technology ValueRAM KCP426SS6/4 memory module 4 GB 1 x 4 GB DDR4 2666 MHz

£24.50

RRP £33.50

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Kingston Technology ValueRAM KVR32S22S6/4 memory module 4 GB 1 x 4 GB DDR4 3200 MHz

£23.45

RRP £30.67

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Kingston Technology KCP432SS6/4 memory module 4 GB 1 x 4 GB DDR4 3200 MHz

£25.51

RRP £33.16

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Kingston Technology KCP429SS6/4 memory module 4 GB 1 x 4 GB DDR4 2933 MHz

£32.34

RRP £41.23

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Kingston Technology FURY Impact memory module 4 GB 1 x 4 GB DDR3L 1866 MHz

£32.52

RRP £45.25

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Kingston Technology ValueRAM 4GB DDR3-1600MHz memory module 1 x 4 GB

£44.93

RRP £53.17

Save £15.73

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Memory
Package type	SO-DIMM
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
Memory ranking	1
ECC	No
Memory clock speed	1600 MHz
Internal memory type	DDR3
Power
Memory voltage	1.5 V
Technical details
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Features
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
Country of origin	Taiwan
Memory ranking	1
ECC	No
Memory clock speed	1600 MHz
Internal memory type	DDR3
Harmonized System (HS) code	84733020
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Weight & dimensions
Width	67.6 mm
Height	30 mm
Package type	SO-DIMM
Packaging data
Package type	SO-DIMM
Logistics data
Harmonized System (HS) code	84733020
Other features
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Harmonized System (HS) code	84733020

Memory
Package type	SO-DIMM
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
Memory ranking	1
ECC	No
Memory clock speed	1600 MHz
Internal memory type	DDR3
Power
Memory voltage	1.5 V
Technical details
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Features
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
Country of origin	Taiwan
Memory ranking	1
ECC	No
Memory clock speed	1600 MHz
Internal memory type	DDR3
Harmonized System (HS) code	84733020
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Weight & dimensions
Width	67.6 mm
Height	30 mm
Package type	SO-DIMM
Packaging data
Package type	SO-DIMM
Logistics data
Harmonized System (HS) code	84733020
Other features
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Harmonized System (HS) code	84733020

Power
Memory voltage	1.35,1.5 V
Technical details
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Memory
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.35,1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
ECC	No
Memory clock speed	1600 MHz
Internal memory type	DDR3L
Features
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.35,1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
Country of origin	Taiwan
ECC	No
Memory clock speed	1600 MHz
Internal memory type	DDR3L
Harmonized System (HS) code	84733020
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Weight & dimensions
Width	67.6 mm
Height	30 mm
Logistics data
Harmonized System (HS) code	84733020
Other features
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Harmonized System (HS) code	84733020

Power
Memory voltage	1.35,1.5 V
Technical details
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Memory
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.35,1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
ECC	No
Memory clock speed	1600 MHz
Internal memory type	DDR3L
Features
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.35,1.5 V
Memory bus	64 bit
Lead plating	Gold
Module configuration	512M X 64
Row cycle time	48.125 ns
Refresh row cycle time	260 ns
Row active time	35 ns
Country of origin	Taiwan
ECC	No
Memory clock speed	1600 MHz
Internal memory type	DDR3L
Harmonized System (HS) code	84733020
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Weight & dimensions
Width	67.6 mm
Height	30 mm
Logistics data
Harmonized System (HS) code	84733020
Other features
Memory layout	1 x 4096 MB
Internal memory	4096 MB
Chips organisation	X8
Error indication	No
Country of origin	Taiwan
Bus clock rate	1600 MHz
Harmonized System (HS) code	84733020

Power
Memory voltage	1.2 V
Technical details
Country of origin	Taiwan
Sustainability certificates	RoHS
Doesn't contain	Halogen
Compliance certificates	RoHS
Memory
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	260-pin SO-DIMM
CAS latency	19
Memory voltage	1.2 V
Row cycle time	45.75 ns
Refresh row cycle time	350 ns
Row active time	32 ns
Memory ranking	1
ECC	No
Memory clock speed	2666 MHz
Internal memory type	DDR4
Programming power voltage (VPP)	2.5 V
Features
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	260-pin SO-DIMM
CAS latency	19
Memory voltage	1.2 V
Row cycle time	45.75 ns
Refresh row cycle time	350 ns
Row active time	32 ns
Country of origin	Taiwan
Memory ranking	1
ECC	No
Memory clock speed	2666 MHz
Internal memory type	DDR4
Programming power voltage (VPP)	2.5 V
Harmonized System (HS) code	84733020
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Sustainability
Sustainability certificates	RoHS
Doesn't contain	Halogen
Weight & dimensions
Width	69.6 mm
Depth	2.45 mm
Height	30 mm
Logistics data
Harmonized System (HS) code	84733020
Other features
Country of origin	Taiwan
Harmonized System (HS) code	84733020

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Power
Memory voltage	1.35 V
Design
Product colour	Black
Cooling type	Heatsink
Technical details
Product colour	Black
Country of origin	Taiwan
Cooling type	Heatsink
Memory
Buffered memory type	Unregistered (unbuffered)
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.35 V
Module configuration	512M x 64
Memory ranking	1
ECC	No
Memory clock speed	1866 MHz
Internal memory type	DDR3L
Features
Buffered memory type	Unregistered (unbuffered)
Product colour	Black
Memory layout (modules x size)	1 x 4 GB
Internal memory	4 GB
Component for	Laptop
Memory form factor	204-pin SO-DIMM
CAS latency	11
Memory voltage	1.35 V
Module configuration	512M x 64
Country of origin	Taiwan
Cooling type	Heatsink
Memory ranking	1
ECC	No
Memory clock speed	1866 MHz
Internal memory type	DDR3L
Harmonized System (HS) code	84733020
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Weight & dimensions
Package width	57.1 mm
Package depth	14 mm
Package height	171.4 mm
Width	67.6 mm
Depth	3.8 mm
Height	30 mm
Weight	7.61 g
Package weight	25.44 g
Packaging data
Package width	57.1 mm
Package depth	14 mm
Package height	171.4 mm
Package weight	25.44 g
Logistics data
Shipping (inner) case width	19.7 cm
Shipping (inner) case length	31.1 cm
Shipping (inner) case height	6.1 cm
Products per shipping (inner) case	25 pc(s)
Harmonized System (HS) code	84733020
Other features
Country of origin	Taiwan
Harmonized System (HS) code	84733020

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Memory Modules

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Tracking Information